simple drive requirement bv dss -20v small package outline r ds(on) 160m surface mount device i d -2.5a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 150 /w AP2313GN-HF rating -20 + 12 -2.5 0.83 -55 to 150 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current 3 continuous drain current 3 -1.97 pulsed drain current 1 -10 thermal data parameter total power dissipation operating junction temperature range storage temperature range advanced power mosfets from ty provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the sot-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s d g s sot-23 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
AP2313GN-HF electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.01 - v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-2.8a - - 120 m v gs =-4.5v, i d =-2.5a - - 160 m v gs =-2.5v, i d =-2a - - 300 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua - - -1.2 v g fs forward transconductance v ds =-5v, i d =-2a - 4 - s i dss drain-source leakage current v ds =-20v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-16v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 100 na q g total gate charge 2 i d =-2a - 5 8 nc q gs gate-source charge v ds =-16v - 1 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 2 - nc t d(on) turn-on delay time 2 v ds =-10v - 6 - ns t r rise time i d =-1a - 17 - ns t d(off) turn-off delay time r g =3.3 ,v gs =-10v - 16 - ns t f fall time r d =10 -5- ns c iss input capacitance v gs =0v - 270 430 pf c oss output capacitance v ds =-20v - 70 - pf c rss reverse transfer capacitance f=1.0mhz - 55 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.2a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-2a, v gs =0v, - 20 - ns q rr reverse recovery charge di/dt=100a/s - 15 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 360 /w when mounted on min. copper pad. product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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